zhzn1995 / iccad16-n7m2euv

EUV Layer Hotspot Detection Benchmark Suit

ICCAD 2016 CAD Contest Problem C - EUV Simulation

Description

• The four designs testcase1, testcase2, testcase3 and testcase4 are originally from ICCAD 2016 CAD Contest Problem C
• Designs are shrinked to 16nm CD to match N7 EUV specific metal layer design
• Defect (Hotspot) information is in csv files with coordinates (dbu) in the corresponding layouts
• There might be redundant records of hotspots in csv files. The simulation is set with a certain process window and hotspot might occur at the same location under different process conditions (dose, focus).
• Simulation is on EUV lithography model considering mask 3D effect.
• Hotspot information is obtained with the following OPC->Child Models for Process Window->PV Band Simulation
• Only EPE, Bridging and Necking defects are considered and recorded.
• ICCAD2016Contest

References

• Ran Chen, Wei Zhong, Haoyu Yang, Hao Geng, Xuan Zeng, Bei Yu, "Faster Region-based Hotspot Detection", ACM/IEEE Design Automation Conference (DAC), Las Vegas, NV, June 2–6, 2019.

• Haoyu Yang, Shuhe Li, Cyrus Tabery, Bingqing Lin and Bei Yu, "Bridging the Gap Between Layout Pattern Sampling and Hotspot Detection via Batch Active Learning", IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems (TCAD). Early Access